Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model
نویسندگان
چکیده
This paper presents the calibration of novel kinetic velocity model (KVM) in drift-diffusion (DD) transport approach, which can account for ballistic effect short-channel devices. The KVM considers a thermionic emission limit and free carrier acceleration mobility. We develop methodology to extract parameters high-field saturation SiGe nanowires over whole mole fraction range. calibrated DD simulations with show good agreement Boltzmann equation results terms on-state current carrier-weighted distribution wide range gate lengths both linear regimes.
منابع مشابه
A 2-D/3-D Schrödinger-Poisson Drift-Diffusion Numerical Simulation of Radially-Symmetric Nanowire MOSFETs
The phenomenal success of CMOS technology, and, then the progress of the information technology, can be attributed without any doubt to the scaling of the MOS transistor, which has been pushed during more than thirty years to increasingly levels of integration and per‐ formances. Then, MOSFETs have been fabricated always smaller, denser, faster and cheaper in order to provide ever more powerful...
متن کاملSimulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model
We describe an electronic transport model and an implementation approach that respond to the challenges of device modeling for gigascale integration. We use the density-gradient (DG) transport model, which adds tunneling and quantum smoothing of carrier density profiles to the driftdiffusion model. We present the current implementation of the DG model in PROPHET, a partial differential equation...
متن کاملA Circuit Compatible Analytical Device Model for Nanowire FET Considering Ballistic and Drift-Diffusion Transport
In this paper, we propose a quasi-analytical device model of nanowire FET (NWFET) for both ballistic and drift-diffusion current transport, which can be used in any conventional circuit simulator like SPICE. The closed form expressions for I-V and C-V characteristics are obtained by analytically solving device equations with appropriate approximations. The developed model was further verified w...
متن کاملProposal of a physics-based compact model for nanoscale MOSFETs including the transition from drift-diffusion to ballistic transport
We present an analytical model for nanoscale MOSFETs capable to describe the transition from drift-diffusion to ballistic transport. We start from a closed-form model of ballistic Fully Depleted SOI (FDSOI) and Double Gate (DG) MOSFETs with non degenerate statistics, and, on the basis of the Büttiker interpretation of dissipative transport in terms of virtual voltage probes, we show that a long...
متن کاملthe use of appropriate madm model for ranking the vendors of mci equipments using fuzzy approach
abstract nowadays, the science of decision making has been paid to more attention due to the complexity of the problems of suppliers selection. as known, one of the efficient tools in economic and human resources development is the extension of communication networks in developing countries. so, the proper selection of suppliers of tc equipments is of concern very much. in this study, a ...
15 صفحه اولذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2021
ISSN: ['2168-6734']
DOI: https://doi.org/10.1109/jeds.2021.3067008